Accession Number : ADA335302
Title : Process Models for Infrared Focal Plane Array Flexible Manufacturing
Descriptive Note : Final rept. 31 Dec 97
Corporate Author : SRI INTERNATIONAL MENLO PARK CA
Personal Author(s) : Berding, M. A.
PDF Url : ADA335302
Report Date : DEC 1997
Pagination or Media Count : 89
Abstract : The objective of this work is to assist industry in its efforts to devise a flexible manufacturing means for production of high performance Hg(1-x)Cd(x)Te-based focal plane arrays at reduced costs. The program has focused on the properties of impurities and native defects in the material, and how they subsequently impact the device performance. We find that the cation vacancy is a single acceptor in x = 0.2 material, contrary to previous findings. We have explained the inactive incorporation of the group VII elements under mercury-deficient conditions. We have shown that the group I elements have a large fraction of interstitial incorporation, thereby explaining their fast diffusion. We have predicted a model for the amphoteric behavior of arsenic, and have explained its behavior in liquid phase epitaxy from both the tellurium-melts and the mercury-melts. Annealing strategies for activation arsenic as a p-type dopant following growth by molecular beam epitaxy have also been suggested. Our modeling of the MBE growth surface indicates that growth rates are fastest on the ?211! B surface, but that there will be fewer grown-in defects on the ?211! A surface.
Descriptors : *INFRARED EQUIPMENT, *FOCAL PLANE ARRAYS, ANNEALING, ACTIVATION, INDUSTRIES, MANUFACTURING, STRATEGY, PRODUCTION, RATES, EPITAXIAL GROWTH, SEMICONDUCTOR DEVICES, IMPURITIES, REDUCTION, COSTS, SURFACES, DEFECTS(MATERIALS), LIQUID PHASES, DIFFUSION, ELECTRON ACCEPTORS, ARSENIC, AMPHOTERIC, MOLECULAR BEAM EPITAXY.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE