Accession Number : ADA335326

Title :   International Conference on Indium Phosphide and Related Materials, Held in Cape Cod, Massachusetts, on 11 - 15 May 1997.

Descriptive Note : Final rept.

Corporate Author : INSTITUTE OF ELECTRICAL AND ELECTRONICSENGINEERS INC PISCATAWAY NJ

PDF Url : ADA335326

Report Date : 14 JAN 1998

Pagination or Media Count : 695

Abstract : Partial contents: Plenary Session - PLEN1 InP-Based Components for Telecom Systems in Europe; PLEN2 Advanced in InP-Based Optoelectronic Devices and Circuits for Optical Communication, Interconnection and Signal Processing; PLEN3 Unipolar Mid-Infrared Semiconductor Lasers; MA: Power Devices - MA1 Bandgap Engineered InP-Based Power Double Heterojunction Bipolar Transistor; MA2 0.9W/mm, 76% PAE (7GHz) GaInAs/InP Composite Channel HEMTS; MA3 High Power InAlAs/InGaAs/InP-HFET Grown by MOVPE; MA4 InP/InGaAs Double HBTs with High CW Power Density at 10 GHz.

Descriptors :   *INDIUM PHOSPHIDES, SIGNAL PROCESSING, SYMPOSIA, ELECTROOPTICS, GALLIUM ARSENIDES, HETEROJUNCTIONS, ELECTRONIC EQUIPMENT, SEMICONDUCTOR LASERS, EPITAXIAL GROWTH, INTEGRATED CIRCUITS, OPTICAL COMMUNICATIONS, ARSENIDES, POWER, ALUMINUM ARSENIDES, INDIUM, CHANNELS, GALLIUM COMPOUNDS, BIPOLAR TRANSISTORS, HIGH ELECTRON MOBILITY TRANSISTORS.

Subject Categories : Inorganic Chemistry
      Lasers and Masers
      Electrooptical and Optoelectronic Devices
      Laminates and Composite Materials

Distribution Statement : APPROVED FOR PUBLIC RELEASE