Accession Number : ADA335369
Title : 44.5 GHz PHEMT Power Amplifier
Corporate Author : COMMUNICATIONS RESEARCH CENTRE OTTAWA (ONTARIO)
Personal Author(s) : McLelland, Scott ; Stubbs, Malcom G. ; Morin, Gilbert A.
PDF Url : ADA335369
Report Date : DEC 1997
Pagination or Media Count : 43
Abstract : The work described in this report represents the design phase of a gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) power amplifier using pseudomorphic high electron mobility transistors (PHEMTs). The main purpose was to investigate the possible performance of a power amplifier at 44 GHz for future application in a phased array antenna system. The design of a two stage amplifier, providing over 12 dB of gain over the frequency range 43.5-45.5 GHz, is described along with the expected large signal performance. It is expected that the amplifier will provide over 20 dBm of output power. The final layout of the complete chip is also presented.
Descriptors : *INTEGRATED CIRCUITS, *POWER AMPLIFIERS, *HIGH ELECTRON MOBILITY TRANSISTORS, SIGNAL PROCESSING, GALLIUM ARSENIDES, BROADBAND, MONOLITHIC STRUCTURES(ELECTRONICS), ANTENNA ARRAYS, PHASED ARRAYS, NARROWBAND, POWER GAIN.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE