Accession Number : ADA335822
Title : Optoelectronic Devices Based on Novel Semiconductor Structures
Descriptive Note : Final rept. 4 Feb 84-14 Jul 97
Corporate Author : BOWLING GREEN STATE UNIV OH
Personal Author(s) : Ding, Yujie J.
PDF Url : ADA335822
Report Date : 14 JUL 1997
Pagination or Media Count : 17
Abstract : We have proposed a class of nonlinear optical devices based on (cascaded second-order nonlinearities, in particular, optical parametric oscillators and amplifiers, optical frequency shifters, and frequency doublers, in novel configurations. We have developed a microscopic theory for cascading optical nonlinearities and studied influence of the ionized impurities on the tunneling rates in quantum wells. We have set up a state-of-the-art nonlinear optics lab. We have systematically investigated spatially-localized band-gap renormalization and band-filling effects, photoluminescence saturation due to interface traps, and tunneling of heavy holes. We have designed and grown two optimized multilayer structures for implementing optical parametric oscillators and amplifiers, and efficient frequency doublers.
Descriptors : *ELECTROOPTICS, *STRUCTURES, *SEMICONDUCTORS, OSCILLATORS, OPTICAL EQUIPMENT, OPTICAL PROPERTIES, OPTICS, PARAMETRIC ANALYSIS, INTERFACES, QUANTUM WELLS, PHOTOLUMINESCENCE, HOLES(ELECTRON DEFICIENCIES), NONLINEAR OPTICS, IMPURITIES, SATURATION, MICROSCOPY, NONLINEAR SYSTEMS, IONIZATION, TUNNELING, AMPLIFIERS, TRAPS, FREQUENCY SHIFT, FREQUENCY MULTIPLIERS.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE