Accession Number : ADA336086
Title : Study Into the Design of the Semiconductor Power Pulsers With Less Than 1 Nanosecond Front and Up to 100 kV Output
Descriptive Note : Final rept.
Corporate Author : RUSSIAN ACADEMY OF SCIENCES ST PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Personal Author(s) : Kardo-Sysoev, Alexei
PDF Url : ADA336086
Report Date : 1997
Pagination or Media Count : 179
Abstract : The technology of short (less than 10(exp -8 s)) pulse generation is limited, as a rule, by availability of switching devices (closing or opening switches). The most promising devices are semiconductor devices, but until last years the power of semiconductor devices have been far lower, than the power of gas-discharge gaps or magnetic compressing cells. In the last decade, a promising trend connected with the appearance of high-power, super fast semiconductor devices has arisen. The devices operation is based on recently discovered physical effects: superfast recovery of high voltage diodes, and delayed "overvoltaged" breakdown.
Descriptors : *SEMICONDUCTOR DEVICES, *SWITCHES, DIODES, PHYSICAL PROPERTIES, SEMICONDUCTORS, PULSE GENERATORS, RUSSIA, POWER, CIRCUITS, GAS DISCHARGES, DESIGN CRITERIA, SOLID STATE ELECTRONICS, HIGH VOLTAGE.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE