Accession Number : ADA336241

Title :   JPRS Report, Science and Technology Japan, 3rd Microelectronics Symposium

Corporate Author : NATIONAL TECHNICAL INFORMATION SERVICE SPRINGFIELD VA

PDF Url : ADA336241

Report Date : 20 APR 1990

Pagination or Media Count : 77

Abstract : PARTIAL CONTENTS; Activated Metal Junction Technology for AlN/Cu System High Power Module Substrate; Application of Aluminum Nitride to Large Electric Power Insulating Substrate; Degree of Sintering, Thermal Conductivity of Aluminum Nitride Ultrafine Particles; Effect of Baking Pressure on AlN Sintering; Thick Film Resistor for Use in AlN Ceramics.

Descriptors :   *SYMPOSIA, *JAPAN, *MICROELECTRONICS, METALS, ACTIVATION, ALUMINUM COMPOUNDS, NITRIDES, PARTICLES, THERMAL CONDUCTIVITY, JUNCTIONS, THICK FILMS, SINTERING, ULTRAFINES, FILM RESISTORS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE