Accession Number : ADA336657

Title :   Nanocrystalline Processing and Interface Engineering of Nitrides

Descriptive Note : Progress rept. 1 Oct-31 Dec 97

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s) : Ying, Jackie Y. ; Panchula, Martin L.

PDF Url : ADA336657

Report Date : 31 DEC 1997

Pagination or Media Count : 4

Abstract : This report describes the preliminary results obtained in the study of a forced-flow reactor to synthesize nanocrystalline aluminum nitride. Variables such as starting material and the use of a nitriding plasma were examined. It was found that evaporating aluminum, rather than aluminum nitride, resulted in higher yields of material but with a higher level of unnitrided aluminum nanocrystals. The use of a microwave plasma is found to be critical to obtain high levels of nitridation. Future research includes post-nitridation of the nanocrystalline aluminum, and densification and evaluation of the nanocrystalline aluminum nitride.

Descriptors :   *ALUMINUM COMPOUNDS, *INTERFACES, *NITRIDES, *ENGINEERING, *SILICON NITRIDES, DENSITY, MATERIALS, PLASMAS(PHYSICS), MICROWAVES, CRYSTALS, NITRIDING.

Subject Categories : Inorganic Chemistry
      Crystallography
      Plasma Physics and Magnetohydrodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE