Accession Number : ADA337171

Title :   Gallium Arsenide Nitride: A New Material for Optical Interconnects on Silicon Circuits.

Descriptive Note : Final technical rept. Jan-Dec 96,

Corporate Author : CORNELL UNIV ITHACA NY

Personal Author(s) : Ballantyne, J. M.

PDF Url : ADA337171

Report Date : OCT 1997

Pagination or Media Count : 31

Abstract : A proposed direct bandgap ternary material, lattice matchable to silicon, was explored in this exploratory effort. About a dozen molecular beam epitaxy growth runs were performed on gallium arsenide and gallium phosphide, and growths analyzed via Auger spectroscopy, x-ray diffraction, and transmission electron microscopy. Up to 20% nitrogen was Incorporated. Single crystal quality material with about 2% nitrogen was detected. Segregation into gallium nitride and gallium arsenide was always seen.

Descriptors :   *GALLIUM ARSENIDES, *GALLIUM NITRIDES, MATERIALS, SINGLE CRYSTALS, ELECTRON MICROSCOPY, TRANSMITTANCE, QUALITY, SILICON, CIRCUITS, AUGER ELECTRON SPECTROSCOPY, GALLIUM PHOSPHIDES.

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE