Accession Number : ADA337285
Title : Studies of Electronic and Optical Materials: A. Interactions of Oxygen with Si-Ge Alloys and B. Deposition of Films for Optical Storage Applications
Descriptive Note : Final rept. Apr 94-Aug 97
Corporate Author : CITY UNIV OF NEW YORK DEPT OF PHYSICS
Personal Author(s) : Smith, Frederick W.
PDF Url : ADA337285
Report Date : 22 JAN 1998
Pagination or Media Count : 6
Abstract : Experimental studies and modeling of atomic bonding have been carried out for amorphous covalent alloys and CVD diamond films. The following results have been obtained: (1) Two distinct growth regimes have been found for CVD diamond films: an initial period of rapidly increasing roughness, followed by a slower increase as the diamond film grows further. (2) The difficulty in incorporating more than 10 at 96 N in PECVD a-CxNyHz films is related to plasma etching of the films. (3) Predictions for bonding in low epsilon alloys: Si-O and Si-F bonds are preferred in a-SiO2:F while Si-O, Si-F, and O-H bonds are preferred in a-SiO2:F:H. (4) A procedure has been developed for determining the optical constants and the volume fraction of the non-diamond carbon component of CVD diamond films. (5) Entropy have been found to play a critical role in determining the atomic bonding in diamond like carbon alloys. (6) Phase separation is predicted to occur in a-SixCyGez alloys due to the preference for Si-C and Ge-Ge bonds.
Descriptors : *OPTICAL MATERIALS, *OPTICAL STORAGE, *SILICON ALLOYS, COVALENT BONDS, THIN FILMS, DIAMONDS, AMORPHOUS MATERIALS, ETCHING, ENTROPY, GERMANIUM ALLOYS, CARBON ALLOYS.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE