Accession Number : ADA337647
Title : Real Time Control and Experimental Verification of Semiconductor Processing
Descriptive Note : Final rept.
Corporate Author : ARIZONA STATE UNIV TEMPE
Personal Author(s) : Tsakallis, Kostas ; Kozicki, Michael
PDF Url : ADA337647
Report Date : 1997
Pagination or Media Count : 27
Abstract : For a typical production sequence consisting of numerous steps, the resulting silicon wafers contain a large number of devices. Regardless of the nature of the device, certain parameters will vary from one device to another across the wafer surface. These variations are largely due to imperfections in the nature of the fabrication process. For example, oxide growth may not be exactly uniform from one device to another due to uneven heating of the wafer surface during processing. Doping may vary as a function of position due to the nature of the ion implantation process. Variation in a process parameter is undesirable since it results in a deviation from a resulting device parameter goal, and too much deviation can cause a device to function improperly or fail.
Descriptors : *EXPERIMENTAL DATA, *ADAPTIVE CONTROL SYSTEMS, *VERIFICATION, *REAL TIME, *PROCESSING, *SEMICONDUCTORS, *WAFERS, PRODUCTION, GROWTH(GENERAL), FABRICATION, SEQUENCES, ION IMPLANTATION, SURFACES, OXIDES, FEEDBACK, SILICON, DOPING.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE