Accession Number : ADA337685
Title : Establish Methods for Crystal Growth of Si-Ge
Descriptive Note : Final rept. Aug 95-Feb 97
Corporate Author : PARKE MATHEMATICAL LABS INC LOWELL MA
Personal Author(s) : Adamski, Joseph A. ; Bailey, John S.
PDF Url : ADA337685
Report Date : OCT 1997
Pagination or Media Count : 16
Abstract : The SiGe alloy system will result in a whole new set of high performance electronic and optoelectronics devices, such as, thermoelectric generators, infrared detectors, and high speed optical transmitter-receivers. The production of high speed SiGe devices has been limited by thin-film alloy growth techniques which are compatible with silicon substrates. The alloy composition of thin films is limited because of strain between the substrate and the thin film. This contractual effort is aimed at producing bulk alloy SiGe crystals of uniform composition for use as substrates. These new substrates will expand the range of lattice-matched thin film alloys available for development of high speed SiGe devices. SiGe alloy electronic devices offer some advantages over III-V and II-VI compound semiconductors Their chemical and thermo-mechanical. properties will allow them to be closely compatible with established Si processing techniques and Si integrated circuits.
Descriptors : *THIN FILMS, *CRYSTAL GROWTH, THERMOMECHANICS, CHEMICAL PROPERTIES, SUBSTRATES, GROUP V COMPOUNDS, SOLID SOLUTIONS, GROUP II-VI COMPOUNDS, GERMANIUM ALLOYS, SILICON ALLOYS.
Subject Categories : Properties of Metals and Alloys
Distribution Statement : APPROVED FOR PUBLIC RELEASE