Accession Number : ADA337844

Title :   Nineteenth International Conference of Defects in Semiconductors.

Descriptive Note : Conference proceedings.

Corporate Author : AVEIRO UNIV (PORTUGAL)

PDF Url : ADA337844

Report Date : 23 JAN 1998

Pagination or Media Count : 376

Abstract : Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective bandgaps, semiconductors (silicon and lll-V materials), plus radiation effects on detector materials. Topics will also include: GaN. Nanostructures, Large bandgap materials, defects In Epitaxial growth. selforganizing rare earth, metastable defects, pairs and complexes, defect reactions, radiation effects on detector material.

Descriptors :   *EPITAXIAL GROWTH, *SEMICONDUCTORS, *DEFECTS(MATERIALS), *METASTABLE STATE, *DEFECT ANALYSIS, SYMPOSIA, OPTIMIZATION, DETECTORS, MATERIALS, QUANTUM THEORY, SILICON, MOLECULAR STRUCTURE, SOLID STATE PHYSICS, RADIATION EFFECTS.

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE