Accession Number : ADA337921
Title : High Resolution Studies of Thin Film Interfaces
Descriptive Note : Final rept. 1 Nov 95-31 Oct 96
Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF APPLIED AND ENGINEERING PHYSICS
Personal Author(s) : Buhrman, R. A.
PDF Url : ADA337921
Report Date : 27 FEB 1998
Pagination or Media Count : 13
Abstract : This is the final technical report for a research project that has been concerned with high resolution studies of ballistic electron transport phenomena in thin film electronic systems, and with the study of hot electron effects on such systems. The principal tool in this investigation was ballistic electron emission microscopy (BEEM), and related scanning tunnel microscopy (STM) measurements. One focus of the project was on the study of the possible effect of energetic electrons, 2 - 5 eV in energy, tunnel injected into thin film electronic materials from STM tips, in locally stimulating the formation of atomic vacancies and defects, and in the subsequent promotion of interdiffusion of atoms at electronic interfaces. An objective was the development of new ways to manipulate the transport and other properties of materials at nanoscale dimensions. In addition, the investigation developed striking evidence of the critical role of surface and bulk electronic structure, even in comparably simple 'free electron' metal thin films, in determining the direction and magnitude of ballistic electron transport in such materials.
Descriptors : *ELECTRON TRANSPORT, *THIN FILMS, INTERFACES, ELECTRON MICROSCOPY, ELECTRON EMISSION, SCHOTTKY BARRIER DEVICES, NANOTECHNOLOGY.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE