Accession Number : ADA338896

Title :   Cubic Silicon Carbide (3C SiC): Growth and Properties of Single Crystals and Polycrystalline Layers Prepared by Thermal Decomposition of Methyltrichlorosilance in Hydrogen

Descriptive Note : Final rept.

Corporate Author : RUSSIAN ACADEMY OF SCIENCES MOSCOW INST OF PHYSICAL CHEMISTRY

Personal Author(s) : Gorin, Stanislov

PDF Url : ADA338896

Report Date : 07 OCT 1994

Pagination or Media Count : 21

Abstract : This report results from a contract tasking Russian Academy of Sciences as follows: Investigate the process of growing cubic silicon carbide from the vapor phase in the form of single crystals and polycrystalline layers that can be used for the production of various semiconducting devices and passive elements.

Descriptors :   *SINGLE CRYSTALS, *SILICON CARBIDES, *POLYCRYSTALLINE, THERMAL PROPERTIES, PRODUCTION, METHYL RADICALS, LAYERS, PASSIVE SYSTEMS, SEMICONDUCTOR DEVICES, VAPOR PHASES, HYDROGEN, RUSSIA, DECOMPOSITION, PYROLYSIS, CHLOROSILANES.

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE