Accession Number : ADA464072

Title :   First Demonstration of ~10 Microns FPAs in InAs/GaSb SLS

Descriptive Note : Journal article (postprint)

Corporate Author : NORTHWESTERN UNIV EVANSTON IL CENTER FOR QUANTUM DEVICES

Personal Author(s) : Razeghi, Manijeh ; Delaunay, Pierre-Yves ; Nguyen, Binh M. ; Hood, Andrew ; Hoffman, Darin ; McClintock, Ryan ; Wei, Yajun ; Michel, Erick ; Nathan, Vaidya ; Tidrow, Meimei Z.

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Report Date : OCT 2006

Pagination or Media Count : 5

Abstract : The concept of Type II InAs/GaSb superlattice was first brought by Nobel Laureate L. Esaki, et al. in the 1970s. There had been few studies on this material system until two decades later when reasonable quality material growth was made possible using molecular beam epitaxy. With the addition of cracker cells for the group V sources and optimizations of material growth conditions, the superlattice quality become significantly improved and the detectors made of these superlattice materials can meet the demand in some practical field applications. Especially in the LWIR regime, it provides a very promising alternative to HgCdTe for better material stability and uniformity, etc. We have developed the empirical tight binding model (ETBM) for precise determination of the superlattice bandgap.

Descriptors :   *SUPERLATTICES, *GALLIUM ANTIMONIDES, *INDIUM ARSENIDES, *FOCAL PLANE ARRAYS, REPRINTS, BAND GAPS, MOLECULAR BEAM EPITAXY, INFRARED OPTICAL MATERIALS, MESA DIODES

Subject Categories : ELECTROOPTICAL AND OPTOELECTRONIC DEVICES
      CRYSTALLOGRAPHY

Distribution Statement : APPROVED FOR PUBLIC RELEASE

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