Accession Number : ADB019116

Title :   Gallium Phosphide Photodiode Development

Descriptive Note : Final technical rept. Oct 1974-Apr 1976

Corporate Author : HONEYWELL RADIATION CENTER LEXINGTON MA

Personal Author(s) : Chiang, A M ; Rotolante, R

PDF Url : ADB019116

Report Date : Mar 1977

Pagination or Media Count : 51

Abstract : The specific objectives of this program were to fabricate, test and deliver five single-element (detector size 0.01 x 0.01 inch) gallium phosphide (GaP) photovoltaic detectors with performance design goals (for each element) of eta 30% and NEP or = 2.5 time 10 to the -14th power W/sq. root Hz at lambda = 0.4 micrometers. These detectors demonstrate the feasibility for the eventual use of GaP photodiodes in a synchronous orbit, strapdown star sensor. Additionally, photoconductive test samples were fabricated in order to evaluate the characteristics of copper-doped GaP crystals. The work effort under this contract resulted in the production, test and delivery of five high performance Mg(+) ion implanted GaP photovoltaic detectors.

Descriptors :   *GALLIUM PHOSPHIDES, *PHOTODIODES, ABSORPTION COEFFICIENTS, ELECTRICAL PROPERTIES, FABRICATION, ION IMPLANTATION, MAGNESIUM, NOISE(ELECTRICAL AND ELECTROMAGNETIC), OPTICAL DETECTORS, OPTICAL PROPERTIES, SCIENTIFIC SATELLITES, STARS, TEST AND EVALUATION, TEST METHODS

Subject Categories : Optical Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE