Accession Number : ADB023901

Title :   Ion Implantation of Wide Bandgap Semiconductors

Descriptive Note : Annual technical rept. no. 1, 1 Oct-30 Sep 1977

Corporate Author : HUGHES RESEARCH LABS MALIBU CA

Personal Author(s) : Anderson, C L ; Dunlap, H L ; Ramiller, C L ; Kamath, G S

PDF Url : ADB023901

Report Date : Nov 1977

Pagination or Media Count : 41

Abstract : The principal dopants studied under this program are sulfur and selenium, both n-type. Topics covered in this report include (1) encapsulation technology, (2) transferability of sulfur or selenium implantation technology, (3) dual implantation of sulfur or selenium with gallium, and (4) thermal conversion of semi-insulating GaAs.

Descriptors :   *GALLIUM ARSENIDES, *ION IMPLANTATION, *SEMICONDUCTORS, ANNEALING, BROADBAND, DOPING, ELECTRICAL PROPERTIES, ENCAPSULATION, FILMS, N TYPE SEMICONDUCTORS, OXYNITRIDES, PHOTOMICROGRAPHY, SELENIUM, SILICON NITRIDES, SUBSTRATES, SULFUR, VAPOR DEPOSITION

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE