Accession Number : ADB023901

Title :   Ion Implantation of Wide Bandgap Semiconductors.

Descriptive Note : Annual technical rept. no. 1, 1 Oct-30 Sep 77,

Corporate Author : HUGHES RESEARCH LABS MALIBU CA

Personal Author(s) : Anderson, C. L. ; Dunlap, H. L. ; Ramiller, C. L. ; Kamath, G. S.

Report Date : NOV 1977

Pagination or Media Count : 40

Abstract : The principal dopants studied under this program are sulfur and selenium, both n-type. Topics covered in this report include (1) encapsulation technology, (2) transferability of sulfur or selenium implantation technology, (3) dual implantation of sulfur or selenium with gallium, and (4) thermal conversion of semi-insulating GaAs. (Author)

Descriptors :   *SEMICONDUCTORS, *GALLIUM ARSENIDES, *ION IMPLANTATION, BROADBAND, DOPING, N TYPE SEMICONDUCTORS, SULFUR, SELENIUM, ENCAPSULATION, ANNEALING, SILICON NITRIDES, OXYNITRIDES, FILMS, ELECTRICAL PROPERTIES, VAPOR DEPOSITION, PHOTOMICROGRAPHY, SUBSTRATES.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE