Accession Number : ADB034206

Title :   X-Band Power Field Effect Transistor.

Descriptive Note : Final technical rept. 15 Apr 76-15 Apr 78,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS

Personal Author(s) : Wisseman, W. R. ; Doerbeck, F. H. ; Macksey, H. M. ; Sokolov, V. ; Tserng, H. Q.

Report Date : AUG 1978

Pagination or Media Count : 203

Abstract : This report summarizes progress made during this 24-month program. The objective of this contract was to advance GaAs power FET technology to a level that permits fabrication of reliable devices capable of achieving high power and wide bandwidth operation at X-band frequencies. The program scope encompassed material, device, and circuit development. At the completion of the contract, FET single and multistage microstrip amplifiers and FET microstrip oscillators were delivered to AFAL. Device deliveries were made periodically throughout the contract. A number of significant achievements have been made under this contract. High quality epitaxial wafers with undoped buffer layers were prepared routinely using a two-bubbler system. The epitaxial growth system was scaled up in size to permit growth on slices of up to 5 cm diameter. At 8 GHz, an output power of 5.1 W has been achieved with 5 dB gain and 34.6% power-added efficiency. At 10 GHz, 3.9 W has been obtained with 6 dB gain. Single-stage microstrip amplifiers have delivered up to 4 W of output power at X-band with a 1 dB bandwidth well over 1 GHz and power-added efficiency well in excess of 20%. Multistage amplifiers have demonstrated high gain (> 30 dB) and high-power (4 to 5 W) at C- and X-bands. (Author)

Descriptors :   *FIELD EFFECT TRANSISTORS, *POWER AMPLIFIERS, *MICROWAVE OSCILLATORS, GALLIUM ARSENIDES, VAPOR PHASES, EPITAXIAL GROWTH, CONTINUOUS WAVES, PULSE AMPLIFIERS, HIGH POWER, C BAND, X BAND, PULSE RATE, EFFICIENCY.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE