Accession Number : ADB044073
Title : K-Band Low Noise GaAs FET.
Descriptive Note : Final rept. Apr 78-May 79,
Corporate Author : HUGHES AIRCRAFT CO TORRANCE CA ELECTRON DYNAMICS DIV
Personal Author(s) : Ladd, Glenn O., Jr. ; Keithley, Gary W. ; Kim, H. B. ; Hackett, L. H. ; Schellenberg, J.
Report Date : AUG 1979
Pagination or Media Count : 87
Abstract : The development of FET devices and circuits for operation at K-band is described. Electron beam lithography was used to fabricate 0.5 micrometer gates for FETs with channels on liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), and ion implantation. LPE FETs exhibited the high gain required for K-band operation and were operated as amplifiers at 30 GHz, 35 GHz and 38 GHz. Maximum gains of more than 10 dB were achieved in each case. The best K-band noise figures measured were 6.9 dB with 5 dB gain at 30 GHz, and 10 dB, with 5 dB gain at 35 GHz. An FET oscillator was also developed using an ion implanted channel FET which was tuned from 28 GHz to 39 Ghz at about 1 mW of output power. (Author)
Descriptors : *FIELD EFFECT TRANSISTORS, *TRANSISTOR AMPLIFIERS, HIGH GAIN, GALLIUM ARSENIDES, LOW NOISE, NOISE(ELECTRICAL AND ELECTROMAGNETIC), K BAND, GATES(CIRCUITS), FABRICATION, CHANNELS, PHOTOLITHOGRAPHY, ELECTRON BEAMS, ION IMPLANTATION, OUTPUT, SUBSTRATES, EPITAXIAL GROWTH.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE