Accession Number : ADB096313
Title : Impurity Band Conduction Materials.
Descriptive Note : Final rept. 15 Sep 82-15 Nov 84,
Corporate Author : HUGHES RESEARCH LABS MALIBU CA
Personal Author(s) : Young,M. H. ; Baron,R.
Report Date : MAY 1985
Pagination or Media Count : 83
Abstract : Investigated are the properties of a large array of impurity band conduction (IBC) materials, including (1) silicon;gallium epitaxial and bulk material doped at between 1 x 10 the the 17th power and 3 x 10 to the 18th power Ga/cu. cm. (2) silicon;aluminum bulk samples doped at 1 x 10 the the 18th power Al/cu. cm.; and (3) both epitaxial and bulk silicon:arsenic doped at between 2 x 10 to the 17th power and 1 x 10 to the 18th power As/cu. cm. We have measured key electrical parameters of these characterized IBC materials over a wide range of temepratures and electric field conditions and found a sensitive dependence of IBC properties on both major dopant concentration and residual impurity content. After dramatically reducing compensation and shallow residual impurity concentrations, we fabricated and tested silicon:arsenic BIT devices with excellent performance parameters. Responsivities of approx. 10 A/watt and T micrometers sub BLIP of or approx. = 12 K with operating voltages of or approx. = 1 V at Q su b B of 10 to the 10th power ph/sq. cm-sec were observed. The best silicon:arsenic BIT devices were doped with 3 - 6.5 x 10 the 17th power As/cu. cm. and used 15 - 20 micrometers thick detector layers.
Descriptors : *BAND THEORY OF SOLIDS, *ELECTRICAL CONDUCTIVITY, ALUMINUM, ARRAYS, ARSENIC, BULK MATERIALS, CONCENTRATION(COMPOSITION), ELECTRIC FIELDS, ELECTRICAL PROPERTIES, EPITAXIAL GROWTH, GALLIUM, IMPURITIES, PARAMETERS, RANGE(EXTREMES), RESIDUALS, SENSITIVITY, SHALLOW DEPTH, SILICON, DOPING
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE