Accession Number : ADD000169

Title :   Thin Film MIS Storage Diode.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Lile,Derek L ; Collins,David A

Report Date : 29 Jan 1974

Pagination or Media Count : 4

Abstract : The patent describes the method of storing information in a MIS light sensitive diode whose photovoltaic response may be altered reproducibly and reversibly by irradiation with suitable wavelength electromagnetic radiation or the temporary application of an electric voltage. The diode can be InAS, or InSb(1-x)As(x). The insulator can be In2O3 or SiO(x).

Descriptors :   *Semiconductor devices, *Semiconductor diodes, *Patents, Information retrieval, Photoconductivity, Indium antimonides, Indium compounds, Silicon oxides, Oxides, Arsenides

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE