Accession Number : ADD000670

Title :   An Integrated Electro-Absorptive Light Modulator/Detector.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Bottka,Nicholas

Report Date : 07 Apr 1975

Pagination or Media Count : 15

Abstract : The patent application describes a double heterojunction semiconductor wherein the junction cavity is illuminated by light having a wavelength just below the absorption edge of the semiconductor's active region. By applying a reverse bias to the junction the absorption edge is shifted, and for large values of reverse bias the junction acts as a photo avalanche diode. Light can be modulated or absorbed in the junction and at the same time the semiconductor can act as a detector in registering the event.

Descriptors :   *Electrooptics, *Photodiodes, Patents, Gallium arsenides, Heterojunctions, Modulators, Optical detectors, Avalanche diodes

Subject Categories : Electrooptical and Optoelectronic Devices
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE