Accession Number : ADD000670
Title : An Integrated Electro-Absorptive Light Modulator/Detector.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Bottka,Nicholas
Report Date : 07 Apr 1975
Pagination or Media Count : 15
Abstract : The patent application describes a double heterojunction semiconductor wherein the junction cavity is illuminated by light having a wavelength just below the absorption edge of the semiconductor's active region. By applying a reverse bias to the junction the absorption edge is shifted, and for large values of reverse bias the junction acts as a photo avalanche diode. Light can be modulated or absorbed in the junction and at the same time the semiconductor can act as a detector in registering the event.
Descriptors : *Electrooptics, *Photodiodes, Patents, Gallium arsenides, Heterojunctions, Modulators, Optical detectors, Avalanche diodes
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE