Accession Number : ADD000878
Title : Method of Purification of Silicon Compounds.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C
Personal Author(s) : Wolff,Guenter A
Report Date : 10 Mar 1959
Pagination or Media Count : 1
Abstract : The conventional methods of purification of silicon compounds have proved to be successful for all impurities but boron. The reason for this failure is that both elements boron (B) and silicon (Si) or corresponding compounds differ only little in properties. What is claimed in this patent is a method of purifying silicon tetrachloride of traces of boron trichloride. It comprises of passing the silicon tetrachloride to be purified thru absorption columns containing an anion exchange resin having attached to its polymer chain a radical selected from the group consisting of tertiary amine radicals (-NR2) and quaternary ammonium radicals (-NR3Cl) wherein R constitutes a member selected from the group consisting of alkyl and phenyl radicals.
Descriptors : *Patents, *Silicon compounds, *Ion exchange, Boron compounds, Chlorides
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE