Accession Number : ADD000907

Title :   Method of Growing Iridium Substituted Single Crystal Using Bismuth Oxide Flux.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C

Personal Author(s) : Kohn,Jack A ; Savage,Robert O , Jr ; Tauber,Arthur

Report Date : 22 Dec 1964

Pagination or Media Count : 2

Abstract : This invention relates to a method of growing single crystals of the general formula BaFe(12-2x)(Ir(x)Me(x)O19 where Me is a divalent metal from the group cobalt, nickel, magnesium, manganese, iron, zinc, or copper and where x is a number from 0 to 0.6. An object of this invention is to grow single crystals of the above general formula that are mechanically sound, have well developed crystalline faces and are relatively free of pits and foreign inclusions. Another object is to grow single crystals of the above general formula for use in microwave and millimeter device applications as in isolators, rotators, filters, power limiters, and harmonic generators.

Descriptors :   *Patents, *Barium oxides, Synthesis(Chemistry), Doping, Iridium, Single crystals, Microwave equipment, Magnetic properties

Subject Categories : Inorganic Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE