Accession Number : ADD001101
Title : Method of Forming a Diffusion Mask Barrier on a Silicon Substrate.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C
Personal Author(s) : Glendinning,William B ; Pharo,Wellington B
Report Date : 16 Jan 1973
Pagination or Media Count : 2
Abstract : The patent concerns a diffusion mask barrier which is formed on a silicon substrate having a particular impurity profile by exposing the substrate surface to a chemical vapor environment of nitric oxide, hydrogen fluoride and water at about 35 degrees C, and for about 3 to 5 minutes to obtain an adherent film of about 1000 to about 3000 angstroms in thickness.
Descriptors : *Silicon, *Semiconductor devices, *Diffusion coatings, *Patents, Masking, Substrates, Doping, Impurities, Nitrogen oxides, Hydrogen fluoride, Water vapor
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE