Accession Number : ADD001112
Title : Method of Forming a Diffusion Mask Barrier on a Silicon Substrate.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C
Personal Author(s) : Glendinning,William B ; Pharo,Wellington B
Report Date : 27 Feb 1973
Pagination or Media Count : 2
Abstract : The patent relates to the top surface of a silicon substrate having a particular impurity profile which is exposed to a chemical vapor environment of nitric oxide, hydrogen fluoride and water at about 35 degrees C, and for about 3 to 5 minutes. Simultaneously with the exposure to the above-described vapor mixture, an image is projected onto the top surface of the silicon substrate during the entire time interval of vapor exposure. For completion of device fabrication, dopant atoms are then diffused into the silicon surface where the image has been projected.
Descriptors : *Diffusion coatings, *Semiconductor devices, *Patents, Fabrication, Barrier coatings, Masking, Silicon, Substrates, Masks, Doping, Diffusion coating
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE