Accession Number : ADD001274
Title : Relief Mask for High Resolution Photolithography.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Abita,Joseph L
Report Date : 16 Jul 1974
Pagination or Media Count : 4
Abstract : The patent relates to a mask comprising a mask pattern disposed on the planar surface of a raised mound extending from a flat backing plate. The invention insures intimate contact between the mask pattern and a substrate surface to be masked even though said substrate surface may have an excess deposit of photoresist or other material around the perimeter thereof. The invention relates to mask construction for use in the photofabrication of microminiature electronic devices, particularly those devices requiring the use of high resolution photolithographic techniques in the fabrication thereof.
Descriptors : *Masks, *Photolithography, *Patents, Masking, Substrates, Microminiaturization
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE