Accession Number : ADD001410

Title :   Raster Pattern Magnetoresistors.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Collins,David A ; Wieder,Harry H

Report Date : 03 Dec 1974

Pagination or Media Count : 5

Abstract : The patent describes a thin-film raster pattern magnetoresistor device produced from an electron beam-recrystallized InSb film employing a photolithographic process to etch out of the InSb film a suitable pattern on which micron-size indium or copper stripes are later etched from a superposed metallic film applied on the InSb by vacuum deposition. The thin-film raster pattern magnetoresistor, device is a resistor, whose initial resistance in zero magnetic field is between 10 and 1,000 ohms, and whose resistance increases with an applied magnetic field, reaching a value greater than a factor of 10 on the initial resistance in a magnetic field of 10 kOe.

Descriptors :   *Variable resistors, *Thin film resistors, *Patents, Magnetoresistance, Indium antimonides, Indium, Copper, Semiconducting films

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE