Accession Number : ADD001682

Title :   Epitaxial Film Transverse Junction PbSnTe Photodetector.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Riedl,H R ; Houston,B B , Jr ; Bis,R F ; Scott,E J ; Simons,D G

Report Date : 28 Jan 1975

Pagination or Media Count : 14

Abstract : The patent application provides a relatively simple inexpensive junction detector of 8-14 micrometer radiation which is compatible with linear array detector configurations and is constructed from an epitaxial layer of PbSnTe doped with sulfur ions.

Descriptors :   *Infrared detectors, *Semiconducting films, *Semiconductor junctions, Patents, Tellurides, Epitaxial growth, Semiconductor doping, Sulfur, Lead compounds, Tin compounds, Photodetectors, Ion implantation

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE