Accession Number : ADD001782
Title : Method of Forming High Reliability Mesa Diode.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Gleason,K Reed ; Bark,Marvin L
Report Date : 15 Apr 1975
Pagination or Media Count : 6
Abstract : The patent describes an improved semiconductor device and technique for fabricating diced mesas in a semiconductor wafer. Two metal layers are coated over the active surface of a semiconductor wafer and etched using standard photoresist techniques to define specific metal dot areas. The wafer is subsequently etched to facilitate dicing of the wafer and reduce wafer thickness. Using the metal dots as masks and differential etches, the contact metal is etched to recede beyond the mesa edge to form the top contact on a semiconductor device having low parasitic capacitance and high resistance to edge breaking and metal shorting of the semiconductor junction.
Descriptors : *TRAPATT devices, *Semiconductor diodes, *Etching, *Patents, Electric contacts, Fabrication, Surface finishing
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE