Accession Number : ADD001876
Title : Determination of the Susceptibility of Semiconductor Devices to Thermal Second Breakdowns.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Cohn,Norman S
Report Date : 13 May 1975
Pagination or Media Count : 6
Abstract : The patent relates to a method for determining the susceptibility of semiconductor devices to damage from an Electro-Magnetic Pulse (EMP) due to induced thermal second breakdown. The method can be used as a nondestructive screening test. It is based on the increase in junction reverse breakdown voltage with temperature and can be used to find the most EMP resistant devices of a given device type.
Descriptors : *Semiconductor devices, *Radiation effects, *Test methods, *Patents, Second breakdown, Electromagnetic pulses, Breakdown(Electronic threshold), Determination
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE