Accession Number : ADD001876

Title :   Determination of the Susceptibility of Semiconductor Devices to Thermal Second Breakdowns.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Cohn,Norman S

Report Date : 13 May 1975

Pagination or Media Count : 6

Abstract : The patent relates to a method for determining the susceptibility of semiconductor devices to damage from an Electro-Magnetic Pulse (EMP) due to induced thermal second breakdown. The method can be used as a nondestructive screening test. It is based on the increase in junction reverse breakdown voltage with temperature and can be used to find the most EMP resistant devices of a given device type.

Descriptors :   *Semiconductor devices, *Radiation effects, *Test methods, *Patents, Second breakdown, Electromagnetic pulses, Breakdown(Electronic threshold), Determination

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE