Accession Number : ADD002045
Title : Damage Thresholds of P-N Junction Devices by a Current Pulse Method.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Petree,Marcella C
Report Date : 07 Feb 1975
Pagination or Media Count : 14
Abstract : The patent application provides an improved method for determining the damage threshold of a semiconductor p-n junction. It uses a constant current pulse so that when second breakdown begins the power applied to the device junction is decreased. The power applied up to the point of second breakdown is constant and easily determined from the oscilloscope traces of voltage and current. In addition, the power is clearly more indicative of the power handling capabilities of the device's p-n junction.
Descriptors : *Junction transistors, *Semiconductor diodes, *Nondestructive testing, Patents, Breakdown(Electronic threshold), Test methods, Damage, Failure(Electronics), Transients, Electromagnetic pulses, Second breakdown
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE