Accession Number : ADD002240
Title : High Density INSB PV IR Detectors.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Gilpin,James B ; Skvarna,Donald G
Report Date : 28 Oct 1975
Pagination or Media Count : 5
Abstract : The present invention provides a process for fabricating a curved array of InSb photovoltaic infrared detectors. The process involves lapping an InSb wafer on a silk wrapped lapping wheel, diffusing the lapped surface of the wafer, abutting the diffused lapped surface of the wafer to a film photo mask which is curved over a quartz lens having the same radius of curvature as that of the lapped wafer, subjecting the diffused lapped surface of the wafer to ultraviolet light by shining the light through the quartz lens and film photo mask, etching the wafer and attaching the required connectors.
Descriptors : *Infrared detectors, *Indium antimonides, *Patents, *Fabrication, Photodiodes, Arrays, Diffusion, Surface finishing, Photomasking
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Infrared Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE