Accession Number : ADD002526

Title :   Method of Fabricating Ion Implanted ZnSe P-N Junction Devices.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Park,Yoon Soo ; Shin,Bok Kyoon

Report Date : 02 Mar 1976

Pagination or Media Count : 12

Abstract : Light emitting diodes, switching diodes with memory, and backward diodes are fabricated by phosphorus ion implantation of a p-n semiconductor junction in aluminum doped zinc selenide substrate material.

Descriptors :   *Zinc selenides, *Semiconductor junctions, *Ion implantation, *Patents, Fabrication, Phosphorus, Aluminum, Semiconductor devices

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE