Accession Number : ADD002542

Title :   Trapatt Planar-Mesa Diode.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Kroger,Harry

Report Date : 17 Mar 1976

Pagination or Media Count : 11

Abstract : The patent application relates to a TRAPATT diode formed in a planar-mesa configuration with a plane junction. An epitaxial layer of one conductivity type is deposited upon a substrate having an opposite conductivity type and forming a plane junction, with the impurity concentration of the substrate being greater than that of the epitaxial layer. A planar diffusion layer having the same conductivity type as the epitaxial layer but a higher impurity concentration, is embedded in the epitaxial layer and the sides are etched in a mesa configuration.

Descriptors :   *TRAPATT devices, Planar structures, Mesa diodes, Epitaxial growth, Diffusion, N type semiconductors, P type semiconductors, Substrates

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE