Accession Number : ADD002805
Title : Injection Laser with Integral Modulator.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Yoder,Max N
Report Date : 06 Jul 1976
Pagination or Media Count : 5
Abstract : The semiconductor target of a GEISHA or EBIC device is integrated with an injection laser diode to form a unitary structure. The electrons created in the GEISHA by impact ionization are swept directly into the injection laser to cause lasing action. This eliminates the need for transmission line connecting the GEISHA to the injection laser diode.
Descriptors : *Injection lasers, *Laser modulators, *Patents, Semiconductor diodes, Electron beams, Excitation
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE