Accession Number : ADD002891
Title : Double-Layer Oxide Gate Insulators for Field-Effect Transistors.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Herman,Wieder H ; Wilmsen,Carl W
Report Date : 02 Jul 1976
Pagination or Media Count : 12
Abstract : The patent application relates to double-layer oxide gate insulators for field effect transistors that are fabricated using gate insulating layers which are compatible with III-V intermetallic compounds. Specifically, indium phosphide is anodized to form the first layer and silicon dioxide is deposited over the first layer to form the second layer.
Descriptors : *Field effect transistors, *Dielectric films, *Metal oxide semiconductors, Indium phosphides, Anodic coatings, Silicon dioxide, Deposition, Intermetallic compounds, Compatibility, Group III compounds, Group V compounds
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE