Accession Number : ADD002891

Title :   Double-Layer Oxide Gate Insulators for Field-Effect Transistors.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Herman,Wieder H ; Wilmsen,Carl W

Report Date : 02 Jul 1976

Pagination or Media Count : 12

Abstract : The patent application relates to double-layer oxide gate insulators for field effect transistors that are fabricated using gate insulating layers which are compatible with III-V intermetallic compounds. Specifically, indium phosphide is anodized to form the first layer and silicon dioxide is deposited over the first layer to form the second layer.

Descriptors :   *Field effect transistors, *Dielectric films, *Metal oxide semiconductors, Indium phosphides, Anodic coatings, Silicon dioxide, Deposition, Intermetallic compounds, Compatibility, Group III compounds, Group V compounds

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE