Accession Number : ADD002964

Title :   N-Channel Deep Depletion Mode Semiconductor Device.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Cricchi,James R

Report Date : 15 Jun 1976

Pagination or Media Count : 12

Abstract : The patent application overcomes problems relating to gate dielectric breakdown and parasitic current flow around device boundaries in N-channel deep depletion mode semiconductors by a device structure that positions the gate window internal to the silicon island and provides P+ diffusion regions between the extremes of the gate window and the island edge. The structure permits the use of a thin deposit of oxide over the gate window and a substantially thicker coating of oxide over the rest of the silicon island and its edges.

Descriptors :   *Semiconductor devices, *N type semiconductors, Dielectric properties, Silicon, Sapphire

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE