Accession Number : ADD002964
Title : N-Channel Deep Depletion Mode Semiconductor Device.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C
Personal Author(s) : Cricchi,James R
Report Date : 15 Jun 1976
Pagination or Media Count : 12
Abstract : The patent application overcomes problems relating to gate dielectric breakdown and parasitic current flow around device boundaries in N-channel deep depletion mode semiconductors by a device structure that positions the gate window internal to the silicon island and provides P+ diffusion regions between the extremes of the gate window and the island edge. The structure permits the use of a thin deposit of oxide over the gate window and a substantially thicker coating of oxide over the rest of the silicon island and its edges.
Descriptors : *Semiconductor devices, *N type semiconductors, Dielectric properties, Silicon, Sapphire
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE