Accession Number : ADD003061

Title :   Combined Electron Beam Semiconductor Modulator and Junction Laser.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Zinn,Mortimer H

Report Date : 02 Mar 1976

Pagination or Media Count : 6

Abstract : Solid state lasers of the electron injection type using Ga(1-x)Al(x)As and GaAs(x)P(1-x) have been considered as possible transmitters of communication and data signals for line of sight usage. They are particularly useful in digital communication systems operating at high bit rates. The bit rate is limited, however, by the duty capabilities of the lasers which, in turn, are limited by the time of rise and fall that can be obtained from nanosecond pulse modulators at the low voltage, high current requirements of the lasers. The problem of obtaining fast rise time in a pulse modulated solid state laser is achieved by combining an electron beam bombarded semiconductor device with a laser diode. This combination semiconductor device is then used within a vacuum envelope and bombarded by electron beams from a cold cathode pulse modulated emitter. The cold cathode emitter may be either the Cesiated surface negative affinity type or a non-active surface negative electron affinity material such as SnO-SnO2 system, or any other cold cathode source.

Descriptors :   *Patents, *Semiconductor lasers, *Pumping(Electronics), Gallium arsenides, Aluminum compounds, Arsenides, Electron beams, Injection lasers, Semiconductor diodes, Laser modulators, Cold cathode tubes

Subject Categories : Lasers and Masers
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE