Accession Number : ADD003209

Title :   Tunable Electroabsorptive Detector.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Bottka,Nicholas ; Teppo,Edward A ; Rehn,Victor L

Report Date : 24 Aug 1976

Pagination or Media Count : 4

Abstract : The patent discloses a tunable, electroabsorptive, semiconductor detector or detector-modulator for detecting or modulating radiation near the absorptive edge of the detector, which edge can be tunably shifted by back biasing. The device has a substrate region of GaAs. The buffer zone is GaAs(u)Sb(1-u). The active region is low dopant GaAs(x)Sb(1-x), and the P-type material is GaAs(y)Sb(1-y).

Descriptors :   *Infrared detectors, *Patents, Tuning devices, Infrared lasers, Frequency modulation, Electrooptics, Optical communications, Gallium arsenides, Gallium antimonides

Subject Categories : Electrooptical and Optoelectronic Devices
      Optical Detection and Detectors
      Infrared Detection and Detectors
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE