Accession Number : ADD003268

Title :   Method of Fabrication of Chromium-Silicon Oxide Thin Film Resistors.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Croson,Edward B

Report Date : 23 Aug 1976

Pagination or Media Count : 17

Abstract : The patent application relates to a method of fabricating thin film resistors for hybrid microcircuits that eliminates electrical contact problems and provides a means for obtaining high precision by trimming. A thin resistive film is deposited on an insulating substrate over a mask. Without breaking vacuum, a second resistive film which is not subject to oxidation is deposited over the first resistive film. The second resistive film is then etched away from portions which are not used as contact points. Since the second resistive material has a different resistivity, it is also used for low value resistive portions in multiple resistor networks.

Descriptors :   *Thin film resistors, *Patent applications, Fabrication, Microcircuits, Vacuum deposition, Chromium, Silicon compounds, Oxides, Nickel, Silicides, Hybrid systems, Etching

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE