Accession Number : ADD003323

Title :   Method for Producing Tailored Etch Rates and Edge Geometries in the Si3N4/Si02 Technology.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Davey,John E

Report Date : 18 Oct 1976

Pagination or Media Count : 10

Abstract : The patent application concerns a method of controlling the etch rates of chemically deposited SiO2 and Si3N4 by ion implantation damage and/or appropriate impurities. Ion implantation or addition of impurities into glossy materials provide species control, depth control, and disorder control, all of which affect the etch rate. Such control prevents 'shelving' and provides a structure from which one may tailor the etch configuration useful in fabrication of silicon integrated circuits.

Descriptors :   *Silicon dioxide, *Silicon nitrides, *Etching, *Patent applications, Ion implantation, Silicon, Integrated circuits, Films, Vapor deposition, Impurities

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE