Accession Number : ADD003396

Title :   Method for Fabricating a Gridded Schottky Barrier Field Effect Transistor.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Goronkin,Herbert ; Aldrich,Richard W

Report Date : 28 Dec 1976

Pagination or Media Count : 4

Abstract : The patent relates to a method for fabricating a gridded Schottky barrier field effect transistor and to the transistor produced thereby. The transistor is constructed by means of a single high resolution mask which does not require alignment to any reference line. By using the masking properties of an oxidation layer on the sides of the etched slots, platinum is deposited only at the bottom of the groove thereby eliminating the requirement of an additional photo-masking step or the necessity of subsequent removal of platinum from other surfaces of the wafer.

Descriptors :   *Field effect transistors, *Schottky barrier devices, *Patents, Grids, Fabrication, Masking

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE