Accession Number : ADD003420
Title : Double-Layer, Polysilicon, Two-Phase, Charge Coupled Device.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s) : Carnes,James E
Report Date : 04 Jan 1977
Pagination or Media Count : 4
Abstract : This invention relates to charge-coupled devices (CCD) and especially to two-phase, charge-coupled, metal-oxide semiconductor (MOS) devices with overlapping polysilicon gates. Two-phase CCD's in the form of polysilicon overlapped by aluminum have proved to be viable structures capable of high yield and excellent operation in devices such as analog computers where they can be used as shift registers, for example. The long gate electrodes of one phase are connected at both ends to a pair of bus lines carrying its clock signal and the long gate electrodes of the second phase are connected at both ends to another pair of bus lines carrying the other clock signal. An object of this invention is to minimize the relative delay of clock pulses between two long adjacent gate electrodes in a two-phase, charge-coupled device. Another object is to admit more light through a two-phase, charge-coupled device for TV systems.
Descriptors : *Patents, *Charge coupled devices, *Metal oxide semiconductors, *Gates(Circuits), Fabrication, Polysilicons, Aluminum, Silicon dioxide, Shift registers, Electrical resistivity, Television display systems, Electrodes, Low light levels
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE