Accession Number : ADD003495

Title :   Ion-Implanted Barriers for Reducing Alkali Ion Drift in Thin film Insulators.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s) : Hughes,Harold L

Report Date : 26 Jan 1977

Pagination or Media Count : 8

Abstract : A method of reducing alkali ion drift in surface passivated semiconductor devices by incorporating ion-implanted barriers within the thin-film surface insulators. High doses of ions such as aluminum and neon, implanted within the passivation and field-insulation regions serve as a barrier against deleterious alkali ion drift. Particularly that of the sodium ions. The peak ion concentration should be at least 2000A from the semiconductor/insulator interface and be implanted before the application of subsequent less-clean glassivation layers. (Author)

Descriptors :   *Patent applications, *Ion implantation, Semiconductor devices, Neon, Aluminum, Alkali metals, Drift

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE