Accession Number : ADD003502

Title :   Ion Implanted Eutectic Gallium Arsenide Solar Cell.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Rahilly,William P

Report Date : 08 Dec 1976

Pagination or Media Count : 8

Abstract : An improved gallium arsenide solar cell is provided by ion implanting both the top and bottom of a eutectic gallium arsenide cell body to obtain a drift electrical field, with multiple ion implants progressively larger in dose and progressively lower in implant energies to provide a P-type ion implanted top layer having a common connection to all P regions of the cell body and an N-type ion implanted bottom layer having a common connection to all N regions of the cell body. The implanted regions of the cell are pulsed electron beam annealed at room temperature. (Author)

Descriptors :   *Patent applications, *Solar cells, *Gallium arsenides, Ion implantation, Eutectics, Electron beams, P type semiconductors, N type semiconductors

Subject Categories : Electric Power Production and Distribution

Distribution Statement : APPROVED FOR PUBLIC RELEASE