Accession Number : ADD003578

Title :   Fabrication of Ion Implanted P-N Junction Devices.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Park,Yoon Soo ; Yu,Phil Won

Report Date : 25 Jan 1977

Pagination or Media Count : 12

Abstract : Light emitters and photovoltaic detectors are fabricated by ion implantation of cadmium, zinc, bromine or chlorine ions into a p-type CuInSe2 substrate so as to from a p-n semiconductor junction. (Author)

Descriptors :   *Patents, *Ion implantation, *P type semiconductors, Junction transistors, Substrates, Cadmium, Zinc, Bromine, Chlorine

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE