Accession Number : ADD003674

Title :   Gadolinium Doped Germanium.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C

Personal Author(s) : Lanigan,Daniel J ; Cohen,Marvin M

Report Date : 17 Aug 1976

Pagination or Media Count : 4

Abstract : A new light-sensitive, current limiting solid state diode is formed by using gadolinium as a dopant in a germanium crystal to which a gold-germanium eutectic is alloyed thereto, in order to form a p-n junction. (Author)

Descriptors :   *Patents, *Photodiodes, *Semiconductor diodes, Current limiters, Germanium, Doping, Gadolinium, Eutectics, Silicon

Subject Categories : Electrical and Electronic Equipment
      Radiofrequency Wave Propagation

Distribution Statement : APPROVED FOR PUBLIC RELEASE