Accession Number : ADD003918

Title :   Method and Means for Passivation and Isolation in Semiconductor Devices.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s) : Davies,D Eirug ; Roosild,Sven A ; Dolan,Russell P , Jr

Report Date : 12 Apr 1977

Pagination or Media Count : 4

Abstract : The use of ion implantation to produce low concentrations of chromium, oxygen or iron in a gallium arsenide junction type semiconductor, utilizing the accompanying low resistivity to provide an improved device. (Author)

Descriptors :   *Patents, *Semiconductor devices, Doping, Ion implantation, Gallium arsenides, Iron, Oxygen, Chromium, Junction transistors

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE