Accession Number : ADD003940

Title :   Amorphous Semiconductor Switch and Memory with a Crystallization-Accelerating Layer.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON D C

Personal Author(s) : Nicolaides,Ruth Vogel

Report Date : 04 Nov 1975

Pagination or Media Count : 6

Abstract : A two terminal amorphous semiconductor device exhibits memory characteristics in one polarity and threshold switching in the opposite polarity when a pulsating AC half wave voltage signal is applied to its terminals. The device comprises an amorphous chalcogenide thin film sandwich positioned on an electrically insulating substrate of silicon oxide. The active film is asymmetrically disposed intermediate two layers of refractory electrode material. A crystallization-accelerating thin film material is interposed between the top refractory electrode material and the chalcogenide semiconductor film. (Author)

Descriptors :   *Patents, *Electronic switches, *Amorphous materials, Thin films, Substrates, Semiconductor devices, Chalcogens

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE